Inhibitation of Si-Ge interdiffusion in Ge-on-insulator structures formed by rapid melt growth

Quasi-pure single-crystal Ge strips on insulator were fabricated using rapid melt growth. The SiGe interdiffusion in the seeding area was found to reduce as the soaking temperature decreased and could be further inhibited by the regrowth of the native oxide on Si seeding window before the Ge layer deposition. By controlling the thickness of the native oxide between the Si seed and Ge layer, Si fraction in the seeding area could be dropped down to less than 1% and the recrystallization of Ge film from the Si seed was not affected. Both Raman and photoluminescence analysis indicated the good quality of the quasi-pure Ge strips.