Stark effect in GaNAsBi/GaAs quantum wells operating at 1.55 μm

• Band structures of n-i doped GaNAsBi/GaAs quantum wells (QWs) were calculated.
• A self-consistent calculation combined with band anti-crossing model was performed.
• The Stark effect was studied in these doped quantum structures.
• Absorption coefficient of GaNAsBi based-QWs was also computed.
• Well parameters were adjusted to obtain QWs operating exactly at 1.55 μm.

The effect of an applied stationary electric field on the band structure of GaNAsBi/GaAs quantum wells has been investigated using self-consistent calculation. Such study based on the optimization of N and Bi contents can be useful to improve physical properties of emitters or photodetector devices operating at 1.55 μm. We have examined the quantum confined Stark effect on the shape of the confining potential, the Fermi level, the subband energies and their corresponding wavefunctions. We have also determined the oscillator strength and the absorption coefficient of the inter-band transitions and their dependences on the applied perturbation.