Multiwavelength Raman analysis of SiOx and N containing amorphous diamond like carbon films

• Siloxanes are used to incorporate Si, O and N into a-C:H films.
• Closed drift ion beam source at varying ion beam energy was used.
• Multiwavelength Raman spectroscopy analysis (325–785 nm) was performed.
• Dispersion of G peak shows that sp3/sp2 ratio rises with increasing ion beam energy.

In the current research SiOx and N containing amorphous diamond like carbon (a-C:H) films were deposited on crystalline silicon from hexamethyldisiloxane and hexamethyldisilazane compounds respectively, using closed drift ion beam source and different ion beam energy in a range 300–800 eV. Hydrogen was used as a carrier gas of the precursors. Composition of the films was studied by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The structure of these films was studied employing multiwavelength (325 nm–785 nm) Raman analysis. From the Raman spectra analysis, the characteristic parameters such as the position of G peak, D/G peak intensity ratio as well as dispersion of G (Disp(G)) peak showing topological disorder of sp2 phase in doped a-C:H films were determined. Analysis of Disp (G) and D/G intensity ratio revealed that in both types of films increase of ion beam energy gives higher sp3/sp2 ratio in the films.