A facile method for the deposition of Gd2O3-doped ceria films by atmospheric pressure plasma jet

• Gadolinia-doped ceria (GDC) films deposited on yttria-stabilized zirconia (YSZ)
• GDC films deposited by atmospheric pressure plasma jet
• Mix valence state and oxygen deficiency proven by X-ray photoelectron spectroscopy
• Formation of (GDC + YSZ) solid solution resulted in the degradation of the total conductivity.
• Optimization of sintering temperature for GDC barrier needed for high performance and stability

Atmospheric pressure plasma jet was applied to grow 10 mol% gadolinia-doped ceria (10GDC) films on poly-crystalline 8 mol% yttria-stabilized zirconia (8YSZ) via precursor solutions of nitrate salts. The morphology of as-deposited gadolinia-doped ceria (GDC) film represented interconnected particles with irregular shapes covered on the 8YSZ substrates. The mixing Ce4 +/Ce3 + valence state and oxygen deficiency (O/Ce + Gd: 1.75) in as-deposited films were proven by X-ray photoelectron spectroscopy quantification study. As increasing the sintering temperature over 1300 °C, the interdiffusion between 10GDC film and 8YSZ substrate occurred due to the formation of (GDC + YSZ) solution analyzed by X-ray diffraction and Raman analyses, which resulted in the degradation of the total conductivity of electrolytes. For the application of solid oxide fuel cell, 10GDC film sintered at 1300 °C for 2 h with a comparable conductivity could be feasibly applied as the diffusion barrier between 8YSZ electrolyte and cathode materials for the prevention of interdiffusion.