Simulation-based sensitivity estimation of the geometric effect of poly gates on nanoscale n-type metal-oxide-semiconductor field-effect transistors with silicon–carbon alloy

• Geometrical effects of devices with silicon–carbon stressor are investigated.
• 22 nm gate length integrated with narrow channel widths is focused.
• Stress effect of contact etch stop layer is also included in mobility estimation.
• Stress simulations combined with sensitive analysis are performed.
• Channel lengths and protruding gate widths are the key factors to affect device mobility.

The mobility enhancement of metal-oxide-semiconductor field-effect transistors (MOSFETs) using narrow gate lengths and channel widths is sensitive to the stress effects of silicon channels related to advanced strain engineering. The layout pattern of MOSFETs significantly influences the device performance, particularly the protruding gate width on shallow trench isolation structures. This paper investigates the geometric construction of an n-channel MOSFET composed of silicon–carbon stressors embedded in source/drain regions. The stressors have a 1.65% carbon mole fraction and a 1.1 GPa tensile contact etch stop layer. Finite element analysis and analysis of variance were used to determine the bending effect of protruding gate widths on the MOSFETs. Results show that the main variation parameters are channel lengths and protruding gate widths, which determine the improvement in device performance. These results can serve as guidelines of stress impacts for predicting the next-generation node technologies of layout patterns.