کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1664976 1518034 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Lithium hydroxide doped tris(8-hydroxyquinoline) aluminum as an effective interfacial layer in inverted bottom-emission organic light-emitting diodes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Lithium hydroxide doped tris(8-hydroxyquinoline) aluminum as an effective interfacial layer in inverted bottom-emission organic light-emitting diodes
چکیده انگلیسی


• Inverted bottom-emission organic light-emitting diodes with Alq3:LiOH interfacial layer were investigated.
• Alq3:LiOH layers possess an enhanced electron injection and transporting ability.
• The dipole layer is formed at the Alq3:LiOH/indium tin oxide interface.
• Alq3:LiOH interfacial layer stabilizes the surface morphology of the Alq3 film.

Lithium hydroxide doped tris(8-hydroxyquinoline) aluminum (Alq3:LiOH) is used as an effective interfacial layer for the fabrication of efficient inverted bottom-emission organic light-emitting diodes (IBOLEDs). When 15% LiOH was doped into an Alq3 electron-transporting layer, the device properties such as the turn-on voltage, maximum luminance, and device efficiency improved, becoming better than those obtained with LiF doping and comparable to those of β-naphthylphenylbiphenyl diamine (NPB)/Alq3-based OLEDs with conventional geometry. Electrical analysis reveals that LiOH-doped Alq3 layers have an enhanced electron injection and transport ability. X-ray and ultraviolet photoelectron spectroscopy results clearly show that the dipole layer formed at the indium tin oxide (ITO)/organic interface contributed to the reduction of the ITO work function, resulting in a decrease of the electron injection barrier. The enhanced electron injection and transport efficiency improves the charge carrier balance in IBOLEDs and leads to better device efficiency. Furthermore, improved morphology of the organic layer can be obtained by doping LiOH into Alq3, which improves device operational stability under thermal stress.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 570, Part B, 3 November 2014, Pages 510–515
نویسندگان
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