Characterizations of MoTiO5 flash memory devices with post-annealing

• MoTiO5-based flash memories have been fabricated.
• MoTiO5 trapping layers could be formed by co-sputtering.
• MoTiO5 layers with annealing exhibited a good memory performance.
• Multiple material analyses confirm that annealing enhanced crystallization.

In this study, high-K MoTiO5 dielectrics were applied as charge trapping layers in fabricated metal-oxide-high-K MoTiO5-oxide-Si-type memory devices. Among the applied MoTiO5 trapping layer treatment conditions, annealing at 900 °C yielded devices that exhibited superior memory performance, such as a larger memory window and faster programming/erasing speed. Multiple material analyses, namely X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy, confirmed that annealing at 900 °C can improve the material quality as a result of crystallization. The fabricated MoTiO5-based memory devices show potential for future commercial memory device applications.