کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1665081 | 1008783 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ge surface-energy-driven secondary grain growth via two-step annealing
ترجمه فارسی عنوان
رشد غلیظ ثانویه از سطح انرژی به وسیله دو مرحله خنثی سازی
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کلمات کلیدی
ژرمانیوم پلی کریستال رشد دانه، رشد دانه ثانویه، ترانزیستورهای فیلم نازک، انلینگ،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
A two-step annealing method with a low thermal budget is proposed for advanced surface-energy-driven secondary grain growth of Ge films without any agglomeration. In the first-step annealing, the normal grain growth from as-deposited poly-crystalline Ge films was induced to make the grain size equivalent to the film thickness at 800 °C. After the subsequent second-step annealing at 900 °C, the much larger secondary grains were obtained than those by single-step annealing at 900 °C. The possible explanation regarding the final microstructure of the two-step annealed film is proposed. The two-step annealing was able to form the microstructure of Ge thin film with very large-grained matrix without any agglomeration, resulting in higher carrier mobility. Therefore, the proposed two-step annealing is believed to be a promising process applicable for channel formation processes in the next-generation Ge thin film transistors for 3D integrated circuits and vertical NAND flash memories.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 571, Part 1, 28 November 2014, Pages 108-113
Journal: Thin Solid Films - Volume 571, Part 1, 28 November 2014, Pages 108-113
نویسندگان
Sangsoo Lee, Yong-Hoon Son, Yongjo Park, Kihyun Hwang, Yoo Gyun Shin, Euijoon Yoon,