کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1665132 1518030 2015 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Permeation barrier performance of Hot Wire-CVD grown silicon-nitride films treated by argon plasma
چکیده انگلیسی
In this work SiNx thin films have been deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) technique to be used as encapsulation barriers for flexible organic electronic devices fabricated on polyethylene terephthalate (PET) substrates. First results of SiNx multilayers stacked and stacks of SiNx single-layers (50 nm each) separated by an Ar-plasma surface treatment are reported. The encapsulation barrier properties of these different multilayers are assessed using the electrical calcium degradation test by monitoring changes in the electrical conductance of encapsulated Ca sensors with time. The water vapor transmission rate is found to be slightly minimized (7 × 10− 3 g/m2day) for stacked SiNx single-layers exposed to argon plasma treatment during a short time (2 min) as compared to that for stacked SiNx single-layers without Ar plasma treatment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 575, 30 January 2015, Pages 72-75
نویسندگان
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