Post-nitriding on μc-InXGa1 − XN films using hot-wire chemical vapor deposition technique

Indium gallium nitride (InXGa1 − XN) is focused as a photo-absorption material for solar cells because of the variable band gap in the range from 0.6 to 3.4 eV. Microcrystalline-InXGa1 − XN (μc-InXGa1 − XN) films prepared by radio frequency (rf)-sputtering do not show good photosensitivity due to a formation of nitrogen vacancies in the films. In this paper, a post-nitriding at the surface of μc-InXGa1 − XN films was examined by using a hot-wire chemical vapor deposition technique with various gases, N2, NH3, H2 and Ar. Atomic ratio of nitrogen at the surface of μc-InXGa1 − XN films increased about 10% by an exposure of mixture gas of N2 and NH3.