کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1665265 1518035 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Solution processed white light photodetector based N, N′-di (2-ethylhexyl)-3,4,9,10-perylene diimide thin film phototransistor
ترجمه فارسی عنوان
راه حل فتوای ترانزیستور نوری، دی اکسید کربن (2-اتیل هگزیل) -3،4،9،10-پروپیلن دییمید بر پایه فوتودنتر نور سفید پردازش شده
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی


• A solution processed n-type organic phototransistor was fabricated.
• The geometry of device allows to be used double sided photo-sensor to detect light.
• The accumulation of charge carrier is effected strongly by illumination intensity.
• The current amplification was observed clearly under illumination without gate bias.

In this study, a solution-processed n-type photo-sensing organic thin film transistor was investigated using polymeric dielectric under different white light illuminations. N, N′-di (2-ethylhexyl)-3,4,9,10-perylene diimide and divinyl tetramethyl disiloxane-bis (benzo-cyclobutene) were used as a soluble active organic semiconductor and as a dielectric material, respectively. Stable amplification was observed in the visible region without gate bias by the device. The electrical characterization results showed that an n-type phototransistor with a saturated electron mobility of 0.6 × 10− 3 cm2/V·s and a threshold voltage of 1.8 V was obtained. The charge carrier density of the channel of the device exhibited photo-induced behaviors that strongly affected the electrical properties of the transistor. The photosensitivity and photoresponsivity values of the device were 63.82 and 24 mA/W, respectively. These findings indicate that perylene diimide is a promising material for use on organic based phototransistors.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 569, 31 October 2014, Pages 22–27
نویسندگان
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