Postoxidation thermal annealing effects of liquid phase deposited TiO2 on (NH4)2Sx-treated AlGaAs

Liquid phase deposition (LPD) was performed to fabricate titanium dioxide (TiO2) on AlGaAs by using ammonium sulfide pretreatment. In addition, the study investigated how postoxidation rapid thermal annealing (RTA) affected the LPD-TiO2 on (NH4)2Sx-treated AlGaAs. The deposition rate of the as-deposited LPD-TiO2 for the 10 min 5% (NH4)2Sx-treated AlGaAs was approximately 126 nm/h. Following the 10 min 5% (NH4)2Sx pretreatment and a postoxidation RTA at 350 °C for 1 min, the root mean square value, leakage current density at 0 MV/cm, interface trap density, and flat-band voltage shift were improved to 6.20, 5.64 × 10− 8 A/cm2, 6.48 × 1011 cm− 2 eV− 1, and 1.5 V, respectively.