کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1665390 | 1518038 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The spectral and electrical properties of vertically coupled quaternary (InAlGaAs) capped InAs/GaAs quantum dot infrared photodetector with different capping thicknesses are investigated, and compared with a conventional quaternary capped uncoupled detector. Electronic coupling between quantum dot layers leads to a reduction in the ground state energy level and hence greater electronic confinement, which reduces the dark current and enhances the detectivity. These expectations are confirmed by our experimental results. Most significantly one order enhancement in peak detectivity (from 1.1 Ã 109 cm Hz1/2/W to 2.48 Ã 1010 cm Hz1/2/W) is observed for optimized coupled quantum dot infrared photodetector compared to uncoupled device. The optimal interlayer barrier thickness which gives maximum detectivity is explained in terms of the interplay between electronic coupling and strain buildup in the heterostructure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 566, 1 September 2014, Pages 1-4
Journal: Thin Solid Films - Volume 566, 1 September 2014, Pages 1-4
نویسندگان
Hemant Ghadi, Akshay Agarwal, Sourav Adhikary, Jay Agawane, Arjun Mandal, Subhananda Chakrabarti, Naresh Babu Pendyala, Sachin Prajapati,