Preparation of CuInS2 thin films by sulfurization using ditertiarybutylsulfide

• Ditertiarybutylsulfide [(t-C4H9)2S: DTBS] was selected as a sulfur source.
• CuInS2 (CIS) thin films were prepared by sulfurization using DTBS.
• CIS thin films sulfurized at high temperature and moderate DTBS flow rate.
• The films have appropriate grains and good crystalline quality.

Sulfurization growth of single-phase chalcopyrite CuInS2 (CIS) thin films was demonstrated using less hazardous liquid metal–organic ditertiarybutylsulfide [(t-C4H9)2S: DTBS]. The effect of sulfurization temperature and DTBS flow rate on the structural and optical properties of CIS was analyzed by scanning electron microscope, X-ray diffraction, energy dispersive X-ray spectroscopy, and photoluminescence spectra. The measurement results indicated that the CIS film formed by this method was suitable as a photo-absorbing layer for CIS-based solar cells.