Influence of In and Ga additives onto SnO2 inkjet-printed semiconductor

• We demonstrate the feasibility of tin dioxide based thin-film transistors by inkjet.
• We propose the basic inks for inkjet-printing tin dioxide with additives In and Ga.
• We present the transparency of the obtained layers.
• We characterize electrically the fabricated TFTs.
• We analyze repeatability and stability of the obtained TFTs.

Tin oxide is a multifunctional semiconductor that offers excellent capabilities in a variety of applications such as solar cells, catalysis and chemical sensors. In this work, tin-based semiconductors have been obtained by means of solution synthesis and inkjet, and compared to similar materials with In and Ga as additives. The effect of different thermal treatments after deposition is also studied. n-Type behavior with saturation mobility > 2 cm2/Vs has been observed, and suitability as a semiconductor for thin-film transistors (TFTs) demonstrated with on/off ratios of more than 8 decades. Both In and In–Ga additives are shown to provide superior environmental stability, as well as significant change from depletion to enhancement operation modes in TFTs.