کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1665553 | 1518049 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sputtering deposition of P-type SnO films using robust Sn/SnO2 mixed target
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Although SnO is a promising p-type oxide material for thin-film transistors (TFTs), the development of the TFT-industry-compatible deposition technique and materials for p-type SnO films is still an issue. In this work, we demonstrate the preparation of pure and p-type SnO films using the Sn/SnO2 mixed target and the conventional magnetron sputtering technique. By controlling the sputtering conditions, the deposited films can be tuned from pure n-type SnO2 to pure p-type SnO. Compared to other sputtering target materials (e.g., pure SnO and Sn), the Sn/SnO2 mixed targets can be fabricated by the high-temperature high-pressure pressing/sintering technique and have higher density and robustness more suitable for real uses. The p-type mobility of SnO films obtained here is comparable to results of other approaches, showing the feasibility of this method.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 555, 31 March 2014, Pages 57-61
Journal: Thin Solid Films - Volume 555, 31 March 2014, Pages 57-61
نویسندگان
Po-Ching Hsu, Wei-Chung Chen, Yu-Tang Tsai, Yen-Cheng Kung, Ching-Hsiang Chang, Chung-Chih Wu, Hsing-Hung Hsieh,