کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1665782 | 1518056 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of CdS thin films deposited on glass and Cu(In,Ga)Se2 layer using chemical bath deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characteristics of CdS thin films deposited on glass and Cu(In,Ga)Se2 layer using chemical bath deposition Characteristics of CdS thin films deposited on glass and Cu(In,Ga)Se2 layer using chemical bath deposition](/preview/png/1665782.png)
چکیده انگلیسی
The characteristics of CdS thin films deposited on glass and Cu(In,Ga)Se2 (CIGS) thin films using a chemical bath deposition method were investigated. The concentration ratio of [S] to [Cd] in the solution and the deposition temperature were varied as key parameters. As the [S]/[Cd] ratio increased, the deposition rates decreased and grains of CdS formed as clusters. When the deposition temperature increased, the deposition rate increased and the grain size decreased, resulting in a circular grain shape. The [S]/[Cd] ratio and deposition temperature were found to have a great effect on the film stoichiometry, surface morphology and transmittance of CdS films. XPS analysis revealed that CdS films contained a significant amount of O, and the interdiffusion between the CdS and CIGS films took place. As the [S]/[Cd] ratio and deposition temperature increased, the CdS films showed good stoichiometry, smooth surface morphology and high transmittance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 548, 2 December 2013, Pages 64-68
Journal: Thin Solid Films - Volume 548, 2 December 2013, Pages 64-68
نویسندگان
Tea Young Lee, Il Hoon Lee, Sung Hee Jung, Chee Won Chung,