کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1665847 | 1518056 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Vertical MgZnO Schottky ultraviolet photodetector with Al doped MgZnO transparent electrode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Vertical MgZnO Schottky ultraviolet photodetector with Al doped MgZnO transparent electrode Vertical MgZnO Schottky ultraviolet photodetector with Al doped MgZnO transparent electrode](/preview/png/1665847.png)
چکیده انگلیسی
In this paper, we report a vertical Schottky ultraviolet photodetector based on the MgZnO:Al transparent electrode. The vertical MgZnO:Al/MgZnO/Au photodetector was fabricated on the sapphire substrate, which shows a good Schottky contacting character. The transparent and conducting MgZnO:Al thin film was developed by magnetron sputtering and annealed to fit the request of our detection. The device is structured vertically in an order of sapphire/MgZnO:Al/MgZnO/Au. The device shows a good Schottky contacting character. The maximum responsivities of the photodetector are 0.0266Â mA/W at 0Â V bias and 13.31Â mA/W under 10Â V backward bias, respectively. The peak response wavelength is located at 340Â nm and cut-off is at the wavelength of 355Â nm. The turn-on voltage is 2.0Â V and the breakdown voltage is 40Â V. The leakage current is less than 70Â pA at a reverse bias of 15Â V.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 548, 2 December 2013, Pages 456-459
Journal: Thin Solid Films - Volume 548, 2 December 2013, Pages 456-459
نویسندگان
Chaoqun Li, Zhenzhong Zhang, Hongyu Chen, Xiuhua Xie, Dezhen Shen,