کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1665864 1518056 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of excessive K and Na on the dielectric properties of (K,Na)NbO3 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effect of excessive K and Na on the dielectric properties of (K,Na)NbO3 thin films
چکیده انگلیسی


• Excessive K and Na are added in precursor to compensate their volatilization.
• Optimal excess values of K and Na are 6 mol% and 17 mol%, respectively (abbreviated to KNN(6,17)).
• KNN(6,17) thin film has relatively smaller loss value of 3.3%.
• The leakage current density of KNN(6,17) thin film is 4.3 × 10− 7 A/cm2.

For the deposition of (K0.48Na0.52)NbO3 (KNN) thin films, excessive K and Na are added in precursor to compensate their volatilization during annealing process. In this work, the effects of excessive K and Na on the dielectric and leakage current properties of the KNN films were studied systemically. The leakage current and dielectric properties of the KNN films are strongly affected by excess amounts of K and Na as well as the annealing conditions. When K and Na are excessive by 6 mol% and 17 mol% respectively, the KNN(6,17) thin films show the smallest leakage current density of 1.8 × 10− 6 A/cm2 at 50 kV/cm and the lowest dielectric loss of 3.3%.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 548, 2 December 2013, Pages 556–559
نویسندگان
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