کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1665931 | 1518057 | 2013 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Time-resolved and temperature-dependent photoluminescence studies on CdTe/ZnTe quantum dots with different ZnTe capping layer thicknesses Time-resolved and temperature-dependent photoluminescence studies on CdTe/ZnTe quantum dots with different ZnTe capping layer thicknesses](/preview/png/1665931.png)
We investigate the effects of the capping layer thickness on the optical properties of CdTe/ZnTe quantum dots (QDs). The time-resolved photoluminescence (PL) measurements used to study the carrier dynamics show a shorter decay time for CdTe/ZnTe QDs with decreasing thickness of the ZnTe cap layer due to an increase in the nonradiative surface recombination rate. The activation energy of the electrons confined in the CdTe/ZnTe QDs, as obtained from the temperature-dependent PL spectra, decreases with the thickness of the ZnTe cap layer. These results indicate that the carrier dynamics and activation energy of CdTe/ZnTe QDs are affected by the thickness of the ZnTe cap layer.
► Optical properties of CdTe/ZnTe quantum dots (QDs) are investigated.
► Different ZnTe capping layer thicknesses are used for the QDs.
► QD photoluminescence peak shifts to a higher energy with cap layer thickness increase.
► Decay time of QDs decreases with cap layer thickness decrease.
► Activation energy of QDs increases with cap layer thickness increase.
Journal: Thin Solid Films - Volume 547, 29 November 2013, Pages 272–275