کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1665986 | 1518060 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Ni and FeCoV films on magnetoelectricity of piezoelectric Pb(Mg1/3Nb2/3)O3-PbTiO3 sandwich structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
To improve the magnetoelectric (ME) property of piezoelectric thin film systems, Ni and FeCoV magnetic films are respectively used to sandwich piezoelectric foil Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) in the middle. The ME voltages and coefficients have been characterized in the longitudinally magnetized and transversely polarized mode. The measurement was conducted under a static magnetic field superimposed with an alternating magnetic field. The influences of the static and the alternating field strength are discussed. The peak ME coefficient obtained in the FeCoV film-sandwiched structure reached 27.4 Ã 10â 3 mV/cm
- A/m, which is about five times greater than the Ni film-sandwiched counterpart. A linear relationship is observed between the magnetoelectric voltage and the alternating field strength under a static field of 31.8Â kA/m for both structures. As FeCoV is also oxidation-resistant and low in cost, the FeCoV film-sandwiched structure (i.e., FeCoV/PMN-PT/FeCoV) makes a good candidate in miniature ME device applications.
- A/m, which is about five times greater than the Ni film-sandwiched counterpart. A linear relationship is observed between the magnetoelectric voltage and the alternating field strength under a static field of 31.8Â kA/m for both structures. As FeCoV is also oxidation-resistant and low in cost, the FeCoV film-sandwiched structure (i.e., FeCoV/PMN-PT/FeCoV) makes a good candidate in miniature ME device applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 544, 1 October 2013, Pages 230-233
Journal: Thin Solid Films - Volume 544, 1 October 2013, Pages 230-233
نویسندگان
Zhaofu Du, Sam Zhang, Lei Wang, Dongliang Zhao,