Ionic nucleated crystallized silicon thin-film transistor fabricated at 130 °C

• Ionic argon was used to remove nuclei at low temperature.
• The ionic argon bombarded the grown surface slightly and reduced the nucleation.
• The preparation of ionic nucleated silicon can be free from extensive bombardment.

An ionic nucleation was proposed to deposit crystallized silicon film fast at 130 °C. Initially, ionic argon was introduced into the deposition of amorphous silicon film for a short time. The energetic argon particles bombarded the grown surface slightly and reduced the nucleation. Then the argon flow was turned off and the film deposition remained proceeding. The low temperature deposited film was crystallized well. When this processed silicon film acted as a channel of bottom-gate thin-film transistor, it possessed current drivability superior to that of thin-film transistor using hydrogen diluted crystallized silicon channel.