Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

• A high Ge content strained SiGe (110) p-channel transistor is fabricated.
• External mechanical uniaxial stress and intrinsic biaxial compressive strain are combined.
• The split capacitance–voltage (C–V) method is used for measurement of hole mobility.

The hole mobility in a high Ge-content (110) SiGe inversion layer is measured and simulated by a split capacitance–voltage method and a quantized k⇀·p⇀ method, respectively. The calibrated model reproduces our experimental channel mobility measurements for the biaxial compressive strain SiGe on (110) substrate. We also explore the impact of external mechanical uniaxial stress on the SiGe (110) p-channel metal oxide semiconductor field effect transistor (PMOSFET). We obtained the corresponding piezoresistance coefficients of the SiGe (110) PMOSFET with external mechanical uniaxial stress parallel and perpendicular to the channel direction. Our study shows the effectiveness in combining external mechanical uniaxial stress and intrinsic biaxial compressive strain for the SiGe (110) PMOSFET.