Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers

In the context of III–V monolithic integration on silicon, synchrotron X-ray diffraction has been employed in this study using a bi-dimensional large area hybrid pixel detector (XPAD third generation) to characterize defects in the GaP layers. Despite a very coherent interface (low plastic relaxation) of GaP/Si, 2 types of defect are detected. Micro-twins contributions are evidenced and quantitatively evaluated from additional reflections analysis. Antiphase domains are evidenced using the Williamson-Hall-like plot method applied to transverse scans extracted directly from single XPAD images taken on specular GaP reflections.

► Antiphase domain evidence and characterization in GaP/Si using X-ray diffraction
► Microtwin evidence and characterization
► Synchrotron diffraction
► Large area X-ray hybrid pixel detector