Growth of V–Al–C thin films by direct current and high power impulse magnetron sputtering from a powder metallurgical composite target

V–Al–C thin films were deposited from a compound powder metallurgical composite target by direct current (DC) magnetron sputtering and High Power Impulse Magnetron Sputtering (HIPIMS) at 500 °C with a time averaged power of 250 W. The effect of pressure, distance, substrate bias potential as well as duty cycle of HIPIMS on the film composition and structure evolution was investigated. The formation of nano-crystalline V2AlC MAX phase is observed in a (V,Al)2Cx matrix at 500 °C during HIPIMS at 3–10% duty cycle. An ion energy flux of > 5.7 times of the conventional DC magnetron sputtering flux was identified to be prerequisite for V2AlC MAX phase formation.

► Thin films were deposited by high power impulse magnetron sputtering (HIPIMS).
► Nano-crystalline V2AlC MAX phase in a (V,Al)2Cx matrix forms by HIPIMS at 500 °C.
► HIPIMS exhibits a significantly larger ion energy flux as compared to DC sputtering.
► The larger ion energy flux is prerequisite for the MAX phase formation.