کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1666137 1518066 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Enhancement of near-band edge photoluminescence of ZnO film buffered with TiN
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Enhancement of near-band edge photoluminescence of ZnO film buffered with TiN
چکیده انگلیسی

ZnO films were deposited on Si substrate by RF-sputtering using titanium nitride (TiN) as buffer layer that was deposited at different thicknesses: 160 and 2290 nm. Despite the lattice mismatch of up to 6.35% between ZnO and TiN, the ZnO films deposited on TiN buffer layers show enhanced near-band-edge photoluminescence (PL) emission at room temperature which is two times higher of magnitude than those grown directly on Si. The PL enhancement intensity, provided by TiN buffer introduction, is attributed to the improvement of ZnO crystalline quality and stoichiometry. The use of a good electrical conductor which has high thermal stability like TiN as buffer layer for the blue emission enhancement of ZnO would make it promising for optoelectronic applications.


► Use of TiN buffer layer for blue emission enhancement of ZnO films is reported.
► The near-band edge photoluminescence intensity of buffered ZnO films is doubled.
► Raman, X-ray diffraction and X-ray photoelectron spectroscopy analyses are correlated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 538, 1 July 2013, Pages 71–77
نویسندگان
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