Effect of zinc addition on properties of cadmium sulfide layer and performance of Cu(In,Ga)Se2 solar cell

Cd(1 − x)ZnxS (CdS:Zn) thin films were grown on an indium tin oxide-coated glass substrate and Cu(In,Ga)Se2 (CIGS) surface by chemical bath deposition for solar cell applications, and their composition, and optical properties were studied to decide the optimum process conditions for buffer layer growth. The average conversion efficiency of CIGS solar panels (24-in.) with the CdS:Zn layer was 0.35% higher than that of conventional solar panels mainly because of the increased open-circuit voltage. This efficiency improvement was not due to modification of the optical properties of the buffer layer, but due to the change in the deposition rate during buffer layer growth.

► CdS:Zn buffer layers were fabricated for Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) panels.
► Composition of buffer layers on indium–tin–oxide (ITO) and CIGS was investigated.
► Transmittance of CdS:Zn on ITO coated glass showed 5% higher than CdS.
► Efficiency of CdS:Zn solution adopted panels showed 0.47% higher than that with CdS.
► However, it was revealed that only Cd and S ions were found at the surface of CIGS.