کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1666206 1518069 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Application of impedance spectroscopy to investigate the electrical properties around the pn interface of Cu(In,Ga)Se2 solar cells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Application of impedance spectroscopy to investigate the electrical properties around the pn interface of Cu(In,Ga)Se2 solar cells
چکیده انگلیسی

The application of impedance spectroscopy (IS) analytical theory to the characterization of Cu(In,Ga)Se2 (CIGS)-based solar cells was investigated. The equivalent circuit of the CIGS solar cell consisting of series and parallel resistances and a “capacitance-like element” labeled as constant phase element (CPE) around the CdS/CIGS interface was developed. The CPE reflects the depletion layer thickness and the pn interface uniformity and quality. In particular, the CPE-p value, which is an index of impedance of CPE, affects the quality around the CdS/CIGS interface in terms of defect existence and inhomogeneity of the heterojunction. These results show possible candidate for the practical application of IS as a simple method for characterizing the heterogeneity of a pn interface.


► We apply impedance spectroscopy (IS) theory for Cu(In,Ga)Se2 (CIGS) solar cells.
► We proposed the equivalent circuit of CIGS solar cells for IS analysis.
► Some parameter represented the quality around the CdS/CIGS interface.
► IS is a promising tool for direct observation of electrical properties easily.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 535, 15 May 2013, Pages 287–290
نویسندگان
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