کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1666231 1518069 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Physical vapor deposition of Bi2S3 as absorber material in thin film photovoltaics
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Physical vapor deposition of Bi2S3 as absorber material in thin film photovoltaics
چکیده انگلیسی

In order to investigate alternative absorber materials for inorganic solar cells, thin films of bismuth trisulfide (Bi2S3) were deposited under high vacuum conditions by the thermal evaporation method from compound material. The effects of the substrate temperature during deposition on the structural, stoichiometric, optical and electrical properties were investigated. Polycrystalline thin films close to an ideal stoichiometry could be deposited for temperatures TSub = 80–290 °C; thereby a transition from rough needle-shaped particles with (hk0)-orientation parallel to the surface of the substrate towards block shaped grains with a preferred direction out of the surface could be observed. Confocal photoluminescence measurements revealed an optical pseudo band-gap of 1.32–1.36 eV and additionally a homogeneous lateral dependence in the optical properties of the thin films. By in-plane transport measurements, an increase of the conductivity was observed from 2 ⋅ 10− 7Ω− 1 cm− 1 for amorphous/microcrystalline films up to 2.5–8.5 ⋅ 10− 3Ω− 1 cm− 1 for polycrystalline films deposited above 250 °C.


► Polycrystalline Bi2S3 thin films were grown by physical vapor deposition.
► The films were close to stoichiometry even for elevated substrate temperatures.
► Two growth regimes of Bi2S3 could be identified.
► Photoluminescence spectra show increase of yield with rising substrate temperature.
► Our findings suggest solar cell preparation at temperatures of at least 240 °C.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 535, 15 May 2013, Pages 394–397
نویسندگان
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