Optimization of nitrogen plasma source parameters by measurements of emitted light intensity for growth of GaN by molecular beam epitaxy

► Operating parameters of Addon radio-frequency nitrogen plasma source studied ► Their influence on molecular beam epitaxy (MBE) growth of GaN analyzed ► MBE growth rate of GaN well correlates with output of the plasma emission sensor. ► Optical emission spectroscopy measurements of the nitrogen plasma made ► Nitrogen excited molecules mainly contribute to plasma-assisted MBE growth of GaN