کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1666354 1518065 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of Ni layers on single crystal sapphire substrates
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Growth of Ni layers on single crystal sapphire substrates
چکیده انگلیسی


• The (0001) plane of Sapphire is parallel to the {111} plane of Ni.
• Epitaxial Ni layer contains in-plane rotated domains (grains) and their twins.
• Single-domain epitaxial layer is produced by varying temperature and deposition rate.
• Atomically smooth surface within domains shows traces of slip-planes at the surface.
• Trenches observed at grain boundaries are attributed to trace amount of contaminants.

Ni single crystal films have been grown by sputtering on the (0001) basal plane of sapphire varying temperature, flux and substrate bias.In the full parameter range epitaxial growth was observed by transmission electron microscopy. The (111) planes of fcc single crystal Ni grow parallel to the substrate surface. Surprisingly, two alternative planes of Ni were parallel to the sapphire (10–10) planes in different domains, either the nickel {110} planes (“A” orientation) or its {211} planes (“B” orientation). In all cases twinned areas appeared in both domains. Changing the flux, the temperature and the bias, it was possible to vary the ratio of the two orientations and to reach that only one orientation remained in a given sample. The phenomenon can be explained by differences in cohesion and elastic strain in the two domains.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 539, 31 July 2013, Pages 96–101
نویسندگان
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