کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1666354 | 1518065 | 2013 | 6 صفحه PDF | دانلود رایگان |
• The (0001) plane of Sapphire is parallel to the {111} plane of Ni.
• Epitaxial Ni layer contains in-plane rotated domains (grains) and their twins.
• Single-domain epitaxial layer is produced by varying temperature and deposition rate.
• Atomically smooth surface within domains shows traces of slip-planes at the surface.
• Trenches observed at grain boundaries are attributed to trace amount of contaminants.
Ni single crystal films have been grown by sputtering on the (0001) basal plane of sapphire varying temperature, flux and substrate bias.In the full parameter range epitaxial growth was observed by transmission electron microscopy. The (111) planes of fcc single crystal Ni grow parallel to the substrate surface. Surprisingly, two alternative planes of Ni were parallel to the sapphire (10–10) planes in different domains, either the nickel {110} planes (“A” orientation) or its {211} planes (“B” orientation). In all cases twinned areas appeared in both domains. Changing the flux, the temperature and the bias, it was possible to vary the ratio of the two orientations and to reach that only one orientation remained in a given sample. The phenomenon can be explained by differences in cohesion and elastic strain in the two domains.
Journal: Thin Solid Films - Volume 539, 31 July 2013, Pages 96–101