Electronic and optical properties of InAs1-xPx alloys under the effect of temperature and pressure

• Effect of temperature of InAs1-xpx alloy was calculated.
• Effect of hydrostatic pressure of InAs1-xpx alloy was calculated.
• Refractive index and high frequency dielectric constant were studied.
• Excellent agreement between our results and published data was obtained.

The calculations are based on local empirical pseudo-potential method (EPM) coupled with the virtual crystal approximation (VCA) which incorporates compositional disorder as an effective potential. This work is concerned with the dependence of the electronic energy band structures for InAs1-xPx alloys on temperature and pressure. Some physical quantities such as band gaps, bowing parameters, refractive indices, and high frequency dielectric constants of the considered alloys with different phosphide concentration were calculated and their variations with the temperature and hydrostatic were studied. There is a good agreement between our results and the available experimental data for the binary compounds which may be a support for the results of the ternary alloys.