کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1666402 | 1518065 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-temperature conductivity evaluation of Nb doped SrTiO3 thin films: Influence of strain and growth mechanism
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Doped SrTiO3 thin films, 55 nm thick, were epitaxially grown by Pulsed Laser Deposition with niobium contents ranging from 2 to 5 mol% on SrTiO3 and LaAlO3 substrates. The different templates result in different growth defects, film growth mechanism and therefore a different volume fraction of uniformly strained film under the critical thickness. The investigation of the conductivity reveals a significant difference between the two substrate choices, but only at elevated temperatures with conductivity values up to 30% larger for films on SrTiO3 substrates compared with LaAlO3. Whereas in bulk ceramics the niobium level dictates the total conductivity, here it was found that the substrate choice had a greater influence for thin films, in particular at temperatures over 400 °C. This finding provides important information on conductive layers in complex heterostructures where strain and defects could work cooperatively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 539, 31 July 2013, Pages 384-390
Journal: Thin Solid Films - Volume 539, 31 July 2013, Pages 384-390
نویسندگان
Frédéric Aguesse, Anna-Karin Axelsson, Patrick Reinhard, Vasiliki Tileli, Jennifer L.M. Rupp, Neil McN Alford,