کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1666450 1518078 2012 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation and atomic oxygen erosion resistance of silica films formed on polymethyl methacrylate by solvothermal method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Preparation and atomic oxygen erosion resistance of silica films formed on polymethyl methacrylate by solvothermal method
چکیده انگلیسی

Silica films were prepared on the surface of polymethyl methacrylate (PMMA) via sol solution and solvothermal treatment, after modifying the surface of PMMA by solvothermal method. The samples were irradiated by atomic oxygen in a ground-based simulation system. The surface morphology and structure of silica films were investigated by atomic force microscopy, scanning electronic microscopy and attenuated total reflectance-Fourier transformed infrared spectroscopy. In addition, dry and wet thermal cycling tests were performed to investigate the adhesion behavior of silica films on PMMA. The results indicated that a uniform film was easily formed on the surface of PMMA. After atomic oxygen exposure, the silica film becomes more compact, without peeling off, and has good optical transparency.


► The surface of polymethyl methacrylate (PMMA) was modified by solvothermal method.
► The interfacial combination between the silica film and PMMA was improved.
► Silica film can improve the atomic oxygen resistance of PMMA.
► The sample still retained good light transmission after atomic oxygen exposure.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 526, 30 December 2012, Pages 109–115
نویسندگان
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