Non-heating atomic layer deposition of SiO2 using tris(dimethylamino)silane and plasma-excited water vapor

Non-heating atomic layer deposition of SiO2 is developed using tris(dimethylamino)silane (TDMAS) and plasma-excited water vapor. The plasma-excited water is effective in oxidizing the TDMAS-adsorbed SiO2 surface while leaving OH sites on the growing surface at room temperature for further TDMAS adsorption. The growth rate is measured to be 0.075 nm/cycle at room temperature. SiO2 stacking directly on a Ge (100) wafer at room temperature is demonstrated, where an atomically flat interface is confirmed by transmission electron microscope observation.

► SiO2 non-heating atomic layer deposition is developed using tris(dimethylamino)silane.
► The oxidizing agent is plasma-excited water vapor.
► The growth rate is measured to be 0.075 nm/cycle at room temperature.
► SiO2 stacking on a Ge (100) wafer with an atomically flat interface is demonstrated.