کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1666510 | 1518079 | 2012 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes](/preview/png/1666510.png)
The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.
► The electrical properties of n-ZnO/p-Si heterojunction diodes were researched.
► The n-ZnO/p-Si diode without H2O2 treatment showed a poor rectifying behavior.
► The n-ZnO/H2O2-treated p-Si diode showed a good rectifying behavior.
► The enhanced responsivity can be interpreted by the device rectifying performance.
Journal: Thin Solid Films - Volume 525, 15 December 2012, Pages 154–157