کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1666567 1518080 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Oxidation of thin Ti films and its simultaneous hydrogenation by water vapor plasma
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Oxidation of thin Ti films and its simultaneous hydrogenation by water vapor plasma
چکیده انگلیسی

In this study we investigated the use of low-pressure water vapor plasma for oxidation and simultaneous hydrogenation of 0.4–0.6 μm thick Ti films deposited by magnetron sputter-deposition technique as a function of the power dissipated in the plasma and the plasma exposure time at room temperature. A double-layer film, in which about 100 nm thick upper layer was a hydrogenated TiO2, was formed within 5 min of treatment time. The film oxidation state gradually increases as the treatment time lengthens until it is completely transformed after 60 min for 200 W into the hydrogenated nanocrystalline Ti3O5. It is concluded, that fast H transients because of their high mobility may be responsible for oxygen diffusion enhancement.


► Simultaneous Ti films oxidation and hydrogenation during water plasma treatment.
► Hydrogenated nanocrystalline TiO2 forms in the shallow near surface region.
► Plasma induced reduction of oxidized Ti enhances the chemical activity of surface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 524, 1 December 2012, Pages 133–136
نویسندگان
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