کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1666567 | 1518080 | 2012 | 4 صفحه PDF | دانلود رایگان |

In this study we investigated the use of low-pressure water vapor plasma for oxidation and simultaneous hydrogenation of 0.4–0.6 μm thick Ti films deposited by magnetron sputter-deposition technique as a function of the power dissipated in the plasma and the plasma exposure time at room temperature. A double-layer film, in which about 100 nm thick upper layer was a hydrogenated TiO2, was formed within 5 min of treatment time. The film oxidation state gradually increases as the treatment time lengthens until it is completely transformed after 60 min for 200 W into the hydrogenated nanocrystalline Ti3O5. It is concluded, that fast H transients because of their high mobility may be responsible for oxygen diffusion enhancement.
► Simultaneous Ti films oxidation and hydrogenation during water plasma treatment.
► Hydrogenated nanocrystalline TiO2 forms in the shallow near surface region.
► Plasma induced reduction of oxidized Ti enhances the chemical activity of surface.
Journal: Thin Solid Films - Volume 524, 1 December 2012, Pages 133–136