Study of microstructure deflections and film/substrate curvature under generalized stress fields and mechanical properties

In this article we use a recently developed analytical stress theory to describe hetero-epitaxial growths, extending the analysis capability in case of extreme conditions of strongly nonlinear dependence of the local strain field and of the elastic properties (Young modulus) on the film thickness. We apply this extended theory to study the heteroepitaxial growth of cubic silicon carbide on silicon (100).