Dielectric properties of Ba(Zn1/3Ta2/3)O3 thin films on Pt-coated Si substrates

Ba(Zn1/3Ta2/3)O3 (BZT) thin films were grown on Pt-coated Si substrates at 500 °C substrate temperatures by pulsed electron beam deposition method and post-annealed at 600 and 650 °C for 1 h. The X-ray diffraction patterns indicate that the as-grown films are partially crystallized but single-phase cubic perovskite structure was formed in annealed films. The temperature dependence of the dielectric constant of the BZT films was recorded in the − 100 to + 100 °C range. The annealing treatment induces a decrease of the temperature coefficient of the dielectric permittivity with an order of magnitude, from 2000 to 100 ppm/°C. The influence of the annealing treatments on the temperature behavior of the BZT films was evidenced; a dielectric constant of about 21 at room temperature was obtained for the films annealed at 650 °C.

► Ba(Zn1/3Ta2/3)O3 thin films were grown by pulsed electron beam deposition method.
► Single-phase cubic perovskite structure after post-annealing
► Decrease of the temperature drift of the permittivity with an order of magnitude
► Ba(Zn1/3Ta2/3)O3 films with a dielectric constant around 21 were obtained.