Very low surface recombination velocity of boron doped emitter passivated with plasma-enhanced chemical-vapor-deposited AlOx layers

► Boron doped emitters with a large range of surface doping concentrations were made. ► Plasma-enhanced chemical-vapor-deposited AlOx is used for the passivation. ► Very low emitter saturation current density (5.2-38 fA cm− 2) was obtained. ► The surface recombination velocity was evaluated using simulation.