کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1666744 1518084 2012 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hole transport materials with high glass transition temperatures for highly stable organic light-emitting diodes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Hole transport materials with high glass transition temperatures for highly stable organic light-emitting diodes
چکیده انگلیسی

Two hole transport materials with high glass transition temperatures (Tg ~ 200 °C) have been synthesized by replacing the phenyl groups of 4,4′-bis[N-(1-naphthyl-1)-N′-phenyl-amino]-biphenyl (α-NPD) with the bulkier phenanthrene (N,N′-di(naphthalene-1-yl)-N,N′-di(phenanthrene-9-yl)biphenyl-4,4′-diamine, NPhenD) or anthracene (N,N′-di(anthracene-9-yl)-N,N′-di(naphthalene-1-yl)biphenyl-4,4′-diamine, NAD). The organic light-emitting diodes (OLEDs) using these hole transport materials exhibited stable operation at high temperatures up to 420 K, improved device lifetimes, and reduced operating voltage changes compared to the conventional hole transport materials owing to their high Tg. Although NAD has quite small bandgap as a hole transport material, superior thermal properties of NPhenD and NAD suggest that they can be promising materials for highly stable and high temperature-durable OLEDs and other organic optoelectronic devices.


► Two hole-transport materials with high Tg (~ 200 °C) have been synthesized.
► Organic light-emitting diodes (OLEDs) using the materials showed enhanced lifetime.
► OLEDs using the materials exhibited stable operation up to 420 K.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 24, 1 October 2012, Pages 7157–7163
نویسندگان
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