کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1666821 1518075 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of InGaN-based photovoltaic devices by varying the indium contents
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Characterization of InGaN-based photovoltaic devices by varying the indium contents
چکیده انگلیسی

InGaN-based photovoltaic structures with different indium contents in InGaN active layer were investigated. The peak wavelengths of the photoluminescence (PL) spectra were measured at 464.3 nm and 525.4 nm for the blue-photovoltaic device (B-PV) and the green-photovoltaic device (G-PV) structures, respectively. The flat-band voltage was observed at − 8 V through the lower temperature (10 K) bias-dependent PL measurement in B-PV device, but the flat-band voltage cannot be observed in G-PV device when the reverse bias was larger than − 15 V. The piezoelectric field (PZ) of the G-PV device was larger than the B-PV device through the bias-dependent PL measurement that was caused by the large lattice mismatch between the GaN and InGaN layers with high indium content. The small open-circuit voltage and the larger short-circuit current density (Jsc) were measured in the G-PV device compared with the B-PV device. The large Jsc value of the G-PV device was caused by the large photocurrent escaped from the PZ-field induced tilted-band structure in InGaN active layer. The InGaN-based PV devices with a large indium content and a lager PZ field had potential for the InGaN photovoltaic device applications.


► Piezoelectric fields of the InGaN photovoltaic devices were analyzed.
► Large piezoelectric field in InGaN layer induced a large short-circuit current.
► Wide absorption wavelength range observed in a high Indium InGaN active layer.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 529, 1 February 2013, Pages 278–281
نویسندگان
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