Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

This paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resistive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-dominated while the Pt/BON:Gd/TiN is metal-dominated. Additionally, there is an atypical bipolar resistive switching in the Gd-doping device. This atypical characteristic has not only a size effect, but also a lower operating current. The resistance transitions are due to the variation in conductance of the switching layer, which is clearly influenced by the different area size. A mechanism is proposed to explain this atypical characteristic.

► The boron oxynitride thin film with and without Gd doping were fabricated.
► Doping Gd metal exhibits filament and interface type resistance switching behavior.
► A mechanism can be proposed to illustrate the doping metal effect.