کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1666853 1518075 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin films
چکیده انگلیسی

Sol–gel deposited Ag/TiO2/Pt tri-layers exhibit unipolar resistive switching (URS) with a negative turn-on voltage when fired in air. Variation in both the turn-on voltage and the on-state current at turn-off threshold is observed in successive current–voltage (I–V) measurements. Based on the same composition and processing flow, bipolar resistive switching (BRS) showing positive turn-on voltage by contrast is obtained by applying two alternative procedures: one procedure under oxygen ambience and another one in which indium–tin oxide is used as the bottom electrode. Conduction mechanisms induced by reduction/oxidation reactions explain how firing ambient and bottom electrode affect the switching mode, as well as the distinct turn-on voltage polarity. URS and BRS are related to the amount of ambient oxygen and the arrangement of internal oxygen vacancy, thus determining whether the direction-independent thermochemical heating or polarity-dependent electrochemical oxidation near the anode interface is responsible for the filament rupture. Additionally, the space-charge-limited transport is analyzed to examine how URS and BRS-activated samples significantly differ from each other. Importantly, the temperature-dependent I–V data helps to elucidate the dominant carrier behavior in the regime of low and high electric field.


► Resistive switching mode and polarity in TiO2 were discussed.
► Amounts of non-lattice oxygen were compared.
► Three sample sets of TiO2 were prepared and investigated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 529, 1 February 2013, Pages 430–434
نویسندگان
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