Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal-oxide-semiconductor-field-effect-transistors

► This work investigates the impact of mechanical strain on GIFBE for PD SOI p-MOSFETs. ► FB device shows an insignificant NBTI due to GIFBE. ► GIFBE results from the partial n+ poly gate and anode electron injection model. ► The strained FB device has less NBTI degradation than unstrained devices. ► We verify the band gap narrowing causes less NBTI on strained FB device.