Role of InGaOx resistive switching characteristics on the performances of resistance random access memory of Pt/IGO/TiN device

In this study, the Pt/IGO/TiN resistance random access memory (ReRAM) is investigated by the fabrication of co-sputtering the Ga2O3 and In2O3 targets to form the InGaOx (IGO) film. The Pt/GaOx/TiN structure was fabricated as comparison device. In addition to the bipolar resistance switching characteristic shown in GaOx film, the unipoar switching characteristic is also obtained in IGO device. The switching mechanisms between bipolar and unipolar in the IGO device are investigated by measuring the resistance values in various temperatures. From the results, the proportional relationship between resistance value and temperature among the bipolar switching characteristics illustrates that the switch is caused by the generation/recombination of oxygen vacancies. However, the unipolar switching behaviors can be attributed to metallic filament due to the trend of increasing resistance with the increasing temperature.

► Study on the switching mechanisms in Pt/IGO/TiN and Pt/GaOx/TiN device.
► Pt/IGO/TiN exhibits both bipolar and unipolar switching behavior.
► The bipolar behavior originates from conduction associated to oxygen vacancies.
► The unipolar behavior is demonstrated conduction path of metallic filament.