WITHDRAWN: Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress

This article has been withdrawn at the request of the author(s) and/or editor. The Publisher apologizes for any inconvenience this may cause. The full Elsevier Policy on Article Withdrawal can be found at http://www.elsevier.com/locate/withdrawalpolicy.This article has been retracted at the request of the Editor-in-Chief and the corresponding author. The article is largely a duplication of a paper that has already been published in the Applied Physics Letters 99 (2011) 022104; http://dx.doi.org/10.1063/1.3609873. One of the conditions of submission of a manuscript for publication is that the author declares explicitly that the paper has not been published yet or is not under consideration for publication elsewhere. As such, this article violated the guidelines. The author offers apologies to readers of this journal.