کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1666998 1008838 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Epitaxial growth of Ni films sputter-deposited on a GaAs(001) surface covered with a MgO film
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Epitaxial growth of Ni films sputter-deposited on a GaAs(001) surface covered with a MgO film
چکیده انگلیسی

We studied the epitaxial growth of a Ni film prepared on a GaAs(001) substrate covered with a thin epitaxial MgO buffer film, assuming that this buffer film plays a key role in the epitaxial growth of the Ni film. The MgO and Ni films were deposited by radio-frequency magnetron sputtering of the MgO and Ni targets in pure Ar gas. First, a MgO film of thickness ranging from 78 to 4.4 nm was deposited on the GaAs(001) substrate at a temperature ranging from ambient temperature to 700 °C, and then, a 136-nm-thick Ni film was deposited on the MgO/GaAs substrate at a temperature range 300–500 °C. Using transmission electron microscopy and X-ray diffractometry, we showed that the MgO film grows with the epitaxial relationship MgO(001)[001]//GaAs(001)[001] on GaAs(001) at 500 °C, and that the structure of the Ni film depends on three factors: the MgO/GaAs substrate temperature, the MgO thickness, and the annealing condition of the MgO/GaAs substrate before the Ni deposition. In conclusion, we proved that the Ni film grows with the epitaxial relationship Ni(001)[001]//MgO(001)[001]//GaAs(001)[001] on MgO/GaAs with the 4.4-nm-thick MgO film when the MgO/GaAs substrate is annealed in situ at room temperature before the Ni deposition and maintained at 300 °C during the Ni deposition.


► MgO buffer plays a key role in the epitaxial growth of Ni film on GaAs(001).
► Epitaxial structure of (001)-textured modes better stabilized with thin buffer layer.
► 4.4–nm MgO buffer leads to stable epitaxy of Ni/MgO/GaAs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 23, 30 September 2012, Pages 6831–6835
نویسندگان
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