کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667008 | 1008838 | 2012 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Heteroepitaxy of Ir films on silicon with a ceria/yttria stabilized zirconia buffer layer Heteroepitaxy of Ir films on silicon with a ceria/yttria stabilized zirconia buffer layer](/preview/png/1667008.png)
Heteroepitaxial Ir films on Si(001) with a double ceria/yttria stabilized zirconia heteroepitaxial buffer layer were grown by magnetron sputtering. As-deposited CeO2 films covered with {111} faceted pyramids resulted in iridium films with the [001] axis normal to the substrate plane. The buffered substrates annealed at 1115 °C have a smooth surface; Ir films on such substrates have the (111) orientation and consist of grains turned at 90° toward each other.
► Heteroepitaxial Ir films on CeO2[001] film surface grow in two orientations.
► The surface of the as-grown CeO2 films is the {111} facets of the pyramids.
► Ir films deposited on this surface has [001] orientation.
► Annealing at 1115 °C of CeO2 films results in an atomically smooth surface.
► Ir films deposited on smooth surface have [111] orientation.
Journal: Thin Solid Films - Volume 520, Issue 23, 30 September 2012, Pages 6888–6892