Heteroepitaxy of Ir films on silicon with a ceria/yttria stabilized zirconia buffer layer

Heteroepitaxial Ir films on Si(001) with a double ceria/yttria stabilized zirconia heteroepitaxial buffer layer were grown by magnetron sputtering. As-deposited CeO2 films covered with {111} faceted pyramids resulted in iridium films with the [001] axis normal to the substrate plane. The buffered substrates annealed at 1115 °C have a smooth surface; Ir films on such substrates have the (111) orientation and consist of grains turned at 90° toward each other.

► Heteroepitaxial Ir films on CeO2[001] film surface grow in two orientations.
► The surface of the as-grown CeO2 films is the {111} facets of the pyramids.
► Ir films deposited on this surface has [001] orientation.
► Annealing at 1115 °C of CeO2 films results in an atomically smooth surface.
► Ir films deposited on smooth surface have [111] orientation.