کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1667021 | 1008838 | 2012 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimization of sputtering parameters for deposition of Al-doped ZnO films by rf magnetron sputtering in Ar + H2 ambient at room temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optimization of sputtering parameters for deposition of Al-doped ZnO films by rf magnetron sputtering in Ar + H2 ambient at room temperature Optimization of sputtering parameters for deposition of Al-doped ZnO films by rf magnetron sputtering in Ar + H2 ambient at room temperature](/preview/png/1667021.png)
چکیده انگلیسی
⺠Al-doped ZnO films were deposited at room temperature (RT) and H2 atmosphere. ⺠The electrical properties of the films showed unusual change with pressure and power. ⺠Optimized electrical and optical properties were obtained at 0.8 Pa and 100 W. ⺠The resistivity of 1.43´10-3 W·cm and the transmittance of 90.5% were obtained at RT. ⺠The change of structure and lattice defect with pressure and power is affected by H2.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 23, 30 September 2012, Pages 6963-6969
Journal: Thin Solid Films - Volume 520, Issue 23, 30 September 2012, Pages 6963-6969
نویسندگان
B.L. Zhu, J. Wang, S.J. Zhu, J. Wu, D.W. Zeng, C.S. Xie,